BFP720ESD
SiGe:C NPN RF bipolar transistor
Product description
The BFP720ESD is a wideband RF heterojunction bipolar transistor (HBT) with an
integrated ESD protection.
Feature list
•
•
•
•
Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,
2 kV HBM ESD hardness
Low noise figure NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3 V, 5 mA
High gain Gms = 26 dB at 2.4 GHz and Gma = 19.5 dB at 5.5 GHz, 3 V, 15 mA
OIP3 = 22 dBm at 5.5 GHz, 3 V and low current consumption of 15 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
•
•
Wireless communications: WLAN, WiMax and UWB
Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite
radio (SDARs, DAB) and C-band LNB
Multimedia applications such as portable TV, CATV and FM radio
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
BFP720ESD /
BFP720ESDH6327XTSA1
SOT343
1=B
2=E
3=C
4=E
Marking
Pieces / Reel
T3s
3000
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
v2.0
2018-09-26
BFP720ESD
SiGe:C NPN RF bipolar transistor
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
3.3
3.4
3.5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4
Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Datasheet
2
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Collector emitter voltage
Collector base voltage 1)
Collector emitter voltage 2)
VCEO
–
VCBO
VCES
Unit
Note or test condition
V
Open base
Max.
4.2
3.7
TA = -55 °C, open base
4.9
Open emitter
4.4
TA = -55 °C, open emitter
4.2
E-B short circuited
3.7
TA = -55 °C,
E-B short circuited
Base current
IB
-10
3
mA
–
Collector current
IC
–
30
RF input power
PRFin
–
21
dBm
ESD stress pulse
VESD
-2
2
kV
HBM, all pins, acc. to
JESD22-A114
Total power dissipation 3)
Ptot
–
100
mW
TS ≤ 108 °C
Junction temperature
TJ
–
150
°C
–
Storage temperature
TStg
-55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
2
3
VCBO is similar to VCEO due to design.
VCES is identical to VCEO due to design.
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
Datasheet
3
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Parameter
Symbol
Junction - soldering point
RthJS
Values
Min.
Typ.
Max.
–
415
–
Unit
Note or test condition
K/W
–
120
100
Ptot [mW]
80
60
40
20
0
0
25
50
75
T [°C]
100
125
150
S
Figure 1
Datasheet
Total power dissipation Ptot = f(TS)
4
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
V
IC = 1 mA, IB = 0,
open base
Collector emitter breakdown voltage
V(BR)CEO
4.2
4.7
–
Collector emitter leakage current
ICES
–
–
400 1) nA
VCE = 2 V, VBE = 0,
E-B short circuited
Collector base leakage current
ICBO
400 1)
VCB = 2 V, IE = 0,
open emitter
Emitter base leakage current
IEBO
10 1)
DC current gain
hFE
160
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25 °C
Parameter
Symbol
250
μA
400
Values
Min.
Typ.
Max.
–
43
–
VEB = 0.5 V, IC = 0,
open collector
VCE = 3 V, IC = 15 mA,
pulse measured
Unit
Note or test condition
GHz
VCE = 3 V, IC = 15 mA,
f = 1 GHz
pF
VCB = 3 V, VBE = 0,
f = 1 MHz,
emitter grounded
Transition frequency
fT
Collector base capacitance
CCB
0.05
Collector emitter capacitance
CCE
0.4
VCE = 3 V, VBE = 0,
f = 1 MHz,
base grounded
Emitter base capacitance
CEB
0.45
VEB = 0.4 V, VCB = 0,
f = 1 MHz,
collector grounded
1
Maximum values not limited by the device but by the short cycle time of the 100% test
Datasheet
5
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
VC
Top View
Bias-T
OUT
E
C
B
E
VB
Bias-T
(Pin 1)
IN
Figure 2
Testing circuit
Table 6
AC characteristics, VCE = 3 V, f = 150 MHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
Power gain
•
Maximum power gain
•
Transducer gain
Gms
|S21|2
–
38.5
30.5
–
dB
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
–
0.55
30.5
–
dB
IC = 5 mA
Linearity
•
3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
–
21.5
6.5
–
dBm
ZS = ZL = 50 Ω, IC = 15 mA
Datasheet
6
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 7
AC characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
33.5
30
–
dB
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
–
0.55
29
–
dB
IC = 5 mA
–
21.5
6.5
–
dBm
ZS = ZL = 50 Ω, IC = 15 mA
Unit
Note or test condition
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
Table 8
AC characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
30.5
28
–
dB
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
–
0.6
27
–
dB
IC = 5 mA
–
21.5
6
–
dBm
ZS = ZL = 50 Ω, IC = 15 mA
Unit
Note or test condition
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
Table 9
AC characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
28
26
–
dB
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
–
0.6
24.5
–
dB
IC = 5 mA
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
–
21.5
6
–
dBm
ZS = ZL = 50 Ω, IC = 15 mA
Datasheet
7
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 10
AC characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
27
24.5
–
dB
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
–
0.6
23.5
–
dB
IC = 5 mA
–
22
6.5
–
dBm
ZS = ZL = 50 Ω, IC = 15 mA
Unit
Note or test condition
Linearity
• 3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
Table 11
AC characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Typ. Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
26
23
–
dB
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
–
0.65
21.5
–
dB
IC = 5 mA
–
22.5
7.5
–
dBm
ZS = ZL = 50 Ω, IC = 15 mA
Unit
Note or test condition
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
Table 12
AC characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
24
20
–
dB
IC = 15 mA
Noise figure
• Minimum noise figure
•
Associated gain
NFmin
Gass
–
0.75
18.5
–
dB
IC = 5 mA
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
–
22.5
7.5
–
dBm
ZS = ZL = 50 Ω, IC = 15 mA
Datasheet
8
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 13
AC characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
Power gain
• Maximum power gain
• Transducer gain
Gma
|S21|2
–
19.5
16
–
dB
IC = 15 mA
Noise figure
•
Minimum noise figure
•
Associated gain
NFmin
Gass
–
0.9
14.5
–
dB
IC = 5 mA
–
22
8
–
dBm
ZS = ZL = 50 Ω, IC = 15 mA
Unit
Note or test condition
Linearity
•
3rd order intercept point at output
OIP3
• 1 dB gain compression point at output OP1dB
Table 14
AC characteristics, VCE = 3 V, f = 10 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
15.5
9.5
–
dB
IC = 15 mA
Noise figure
•
Minimum noise figure
•
Associated gain
NFmin
Gass
–
1.55
11
–
dB
IC = 5 mA
–
20
5.5
–
dBm
ZS = ZL = 50 Ω, IC = 15 mA
Linearity
•
3rd order intercept point at output
OIP3
•
1 dB gain compression point at output OP1dB
Note:
Datasheet
Gms = IS21 / S12 I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.4
Characteristic DC diagrams
35
30
IB=165µA
IB=145µA
IC [mA]
25
IB=125µA
20
IB=105µA
15
IB=65µA
IB=85µA
IB=45µA
10
IB=25µA
5
IB=5µA
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCE [V]
Figure 3
Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter
hFE
1000
100
0.1
1
10
100
IC [mA]
Figure 4
DC current gain hFE = f(IC), VCE = 3 V
Datasheet
10
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
100
10
IC [mA]
1
0.1
0.01
0.001
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
VBE [V]
Figure 5
Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 2 V
1
0.1
IB [mA]
0.01
0.001
0.0001
0.00001
0.000001
0.4
0.5
0.6
0.7
0.8
0.9
VBE [V]
Figure 6
Datasheet
Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1.E-04
1.E-05
IB [A]
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
0.3
0.4
0.5
0.6
0.7
0.8
VEB [V]
Figure 7
Datasheet
Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.5
Characteristic AC diagrams
50
45
4.00V
3.00V
2.50V
40
2.00V
30
25
T
f [GHz]
35
20
15
10
1.00V
5
0
Figure 8
0
5
10
15
IC [mA]
20
25
30
Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter
25
20
OIP3 [dBm]
15
10
5
2V, 2.4GHz
3V, 2.4GHz
2V, 5.5GHz
3V, 5.5GHz
0
−5
0
5
10
15
20
25
I [mA]
C
Figure 9
Datasheet
3rd order intercept point at output OIP3 [dBm] = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters
13
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
0.12
0.11
0.1
0.09
0.08
Ccb [pF]
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
0.5
1
1.5
2
V
CB
Figure 10
2.5
3
3.5
4
[V]
Collector base capacitance CCB = f(VCB), f = 1 MHz
50
45
40
35
Gms
G [dB]
30
25
Gms
Gma
20
|S21|2
15
10
5
0
Figure 11
Datasheet
0
1
2
3
4
5
6
f [GHz]
7
8
9
10
Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 15 mA
14
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
43
0.15GHz
40
37
0.45GHz
G [dB]
34
31
0.90GHz
28
1.50GHz
1.90GHz
2.40GHz
25
3.50GHz
22
19
5.50GHz
16
10.00GHz
13
10
0
5
10
15
I [mA]
20
25
30
C
Figure 12
Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz
42
39
0.15GHz
36
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
33
30
G [dB]
27
24
21
18
10.00GHz
15
12
9
6
3
0
0
1
2
3
4
5
VCE [V]
Figure 13
Datasheet
Maximum power gain Gmax = f(VCE), IC = 15 mA, f = parameter in GHz
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
10
0.4
8
0.3
2
10
9
9
3
8
7
4
7 6
0.2
5
0.01 to 10 GHz
6 5
0.1
10
step: 1 GHz
5
0.1
0
4
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
3
4
−0.1
−10
−0.2
−5
−4
2
3
−0.3
1
1
−3
2
−0.4
−0.5
−2
−1.5
15 mA
5 mA
−1
Figure 14
Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 5 / 15 mA
1
1.5
2
0.5
0.4
2.4GHz
0.3
1.9GHz
0.2
4
5
0.9GHz
5.5GHz
0.1
0.1
0
3
0.2 0.3 0.4 0.5
0.45GHz
1
1.5
2
3
10
4 5
I = 5.0mA
c
−0.1
−10
Ic = 15mA
−0.2
−5
−4
−0.3
−3
−0.4
10GHz
−2
−0.5
−1.5
−1
Figure 15
Datasheet
Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 5 / 15 mA
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BFP720ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
2
0.4
3
0.3
10
0.2
9
0.1
0.1
0
4
10
5
9
10
0.03 to 10 GHz
8 0.5 8
0.2 0.3 0.4
1
1.5
2
3
4 5
7
7
−0.1
6
−10
5
6
4
3
5
−0.2
1
2
1
4
−0.3
3
−5
−4
−3
2
−0.4
−0.5
−2
15 mA
5 mA
−1.5
−1
Figure 16
Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 5 / 15 mA
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
0.8
0.6
0.4
I = 15mA
C
IC = 5.0mA
0.2
0
0
2
4
6
8
10
f [GHz]
Figure 17
Datasheet
Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 5 / 15 mA
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BFP720ESD
SiGe:C NPN RF bipolar transistor
NFmin [dB]
Electrical characteristics
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
f = 10GHz
f = 5.5GHz
f = 2.4GHz
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
0
5
10
15
20
25
Ic [mA]
Figure 18
Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz
5
4.5
4
f = 10GHz
f = 5.5GHz
f = 2.4GHz
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
NF50 [dB]
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
Ic [mA]
Figure 19
Note:
Datasheet
Noise figure NF50 = f(IC), VCE = 3 V, ZS = 50 Ω, f = parameter in GHz
The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
18
v2.0
2018-09-26
BFP720ESD
SiGe:C NPN RF bipolar transistor
Package information SOT343
0.9 ±0.1
Package information SOT343
1.25 ±0.1
0.15 -0.05
+0.10
A
0.1
0.1 MIN.
0.1
2.1 ±0.1
A
2
1
3x
+0.10
0.3 -0.05
0.6 -0.05
+0.10
1.3
2 ±0.2
0.1
3
4
0.15
0.2
0.1 MAX.
4
MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [
]
Figure 20
Package outline
Figure 21
Foot print
TYP E CODE
NOTE OF MANUFACTURER
MONTH
YEAR
Figure 22
Marking layout example
4
0.2
2.3
8
2
P IN 1
INDEX MARKING
2.15
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [
Figure 23
Datasheet
1.1
]
Tape dimensions
19
v2.0
2018-09-26
BFP720ESD
SiGe:C NPN RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
2.0
2018-09-26
New datasheet layout.
Datasheet
20
v2.0
2018-09-26
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Edition 2018-09-26
Published by
Infineon Technologies AG
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© 2018 Infineon Technologies AG
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